Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands
- Authors: Esin M.Y.1, Nikiforov A.I.1,2, Timofeev V.A.1, Tuktamyshev A.R.1, Mashanov V.I.1, Loshkarev I.D.1, Deryabin A.S.1, Pchelyakov O.P.1,2
- 
							Affiliations: 
							- Rzhanov Institute of Semiconductor Physics
- Tomsk State University
 
- Issue: Vol 52, No 3 (2018)
- Pages: 390-393
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202680
- DOI: https://doi.org/10.1134/S1063782618030107
- ID: 202680
Cite item
Abstract
The transition from a two-domain to one-domain surface on a Si(100) substrate is investigated. It is demonstrated using reflection high-energy electron diffraction that at a temperature of 600°C and a deposition rate of 0.652 Å/s onto a Si(100) substrate pre-heated to 1000°C and inclined at an angle of 0.35°C to the plane, a series of reflections from the 1 × 2 superstructure completely vanishes at a constant flow of Si. This is attributed to the transition of the surface from monoatomic to diatomic steps. At growth rates lower than 0.652 Å/s, the transition from a two-domain to one-domain surface is also observed; with a decrease in the growth rate, the intensity ratio I2 × 1/I1 × 2 decreases and the maximum of the dependences shifts toward lower temperatures. The complete vanishing of the series of superstructural reflections after preliminary annealing at a temperature of 700°C is not observed; this series only vanishes after annealing at 900 and 1000°C. The growth of Ge islands on a Si(100) surface preliminary annealed at a temperature of 800°C is studied. It is shown that the islands tend to nucleate at the step edges. A mechanism of Ge island ordering on the Si(100) surface is proposed.
About the authors
M. Yu. Esin
Rzhanov Institute of Semiconductor Physics
							Author for correspondence.
							Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
A. I. Nikiforov
Rzhanov Institute of Semiconductor Physics; Tomsk State University
														Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090; Tomsk, 634050						
V. A. Timofeev
Rzhanov Institute of Semiconductor Physics
														Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
A. R. Tuktamyshev
Rzhanov Institute of Semiconductor Physics
														Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
V. I. Mashanov
Rzhanov Institute of Semiconductor Physics
														Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
I. D. Loshkarev
Rzhanov Institute of Semiconductor Physics
														Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
A. S. Deryabin
Rzhanov Institute of Semiconductor Physics
														Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
O. P. Pchelyakov
Rzhanov Institute of Semiconductor Physics; Tomsk State University
														Email: yesinm@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090; Tomsk, 634050						
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