Email this article Polytype inclusions and polytype stability in silicon-carbide crystals
- Authors: Avrov D.D.1, Lebedev A.O.2, Tairov Y.M.1
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Affiliations:
- St. Petersburg State Electrotechnical University
- Ioffe Physical—Technical Institute
- Issue: Vol 50, No 4 (2016)
- Pages: 494-501
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196997
- DOI: https://doi.org/10.1134/S1063782616040059
- ID: 196997
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Abstract
On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots of grown 4H and 6H silicon-carbide compounds.
About the authors
D. D. Avrov
St. Petersburg State Electrotechnical University
Email: siclab-tairov@yandex.ru
Russian Federation, St. Petersburg, 197376
A. O. Lebedev
Ioffe Physical—Technical Institute
Email: siclab-tairov@yandex.ru
Russian Federation, St. Petersburg, 194021
Yu. M. Tairov
St. Petersburg State Electrotechnical University
Author for correspondence.
Email: siclab-tairov@yandex.ru
Russian Federation, St. Petersburg, 197376
