Email this article Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
- Authors: Vasilyev Y.B.1, Mikhailov N.N.2,3, Vasilyeva G.Y.1,4, Ivánov Y.L.1, Zakhar’in A.O.1, Andrianov A.V.1, Vorobiev L.E.4, Firsov D.A.4, Grigoriev M.N.5, Antonov A.V.6, Ikonnikov A.V.6, Gavrilenko V.I.6
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Affiliations:
- Ioffe Physical–Technical Institute
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Peter the Great Saint-Petersburg Polytechnic University
- Ustinov Baltic State Technical University “VOENMEKh”
- Institute for Physics of Microstructures
- Issue: Vol 50, No 7 (2016)
- Pages: 915-919
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197416
- DOI: https://doi.org/10.1134/S1063782616070253
- ID: 197416
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Abstract
The terahertz electroluminescence from Cd0.7Hg0.3Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.
About the authors
Yu. B. Vasilyev
Ioffe Physical–Technical Institute
Author for correspondence.
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
G. Yu. Vasilyeva
Ioffe Physical–Technical Institute; Peter the Great Saint-Petersburg Polytechnic University
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Polytekhnicheskaya 29, St. Petersburg, 195251
Yu. L. Ivánov
Ioffe Physical–Technical Institute
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. O. Zakhar’in
Ioffe Physical–Technical Institute
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. V. Andrianov
Ioffe Physical–Technical Institute
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
L. E. Vorobiev
Peter the Great Saint-Petersburg Polytechnic University
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Polytekhnicheskaya 29, St. Petersburg, 195251
D. A. Firsov
Peter the Great Saint-Petersburg Polytechnic University
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Polytekhnicheskaya 29, St. Petersburg, 195251
M. N. Grigoriev
Ustinov Baltic State Technical University “VOENMEKh”
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. 1-ya Krasnoarmeiskaya 1, St.-Petersburg, 190005
A. V. Antonov
Institute for Physics of Microstructures
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
A. V. Ikonnikov
Institute for Physics of Microstructures
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
V. I. Gavrilenko
Institute for Physics of Microstructures
Email: Yu.Vasilyev@mail.ioffe.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
