Email this article Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it
- Authors: Gaidar G.P.1, Baranskii P.I.2
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Affiliations:
- Institute for Nuclear Research
- Lashkaryov Institute of Semiconductor Physics
- Issue: Vol 51, No 7 (2017)
- Pages: 936-941
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200629
- DOI: https://doi.org/10.1134/S1063782617070090
- ID: 200629
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Abstract
Variations in the tensoresistance, tensomagnetoresistance, and magnetotensoresistance are experimentally and theoretically studied in wide ranges of magnetic-field strengths, 0 kOe ≤ H ≤ 100 kOe, and mechanical stresses, 0 GPa ≤ X ≤ 0.7 GPa, at 77 K under conditions of nondegenerate statistics of the electron gas in n-Ge crystals with different crystallographic orientations.
About the authors
G. P. Gaidar
Institute for Nuclear Research
Author for correspondence.
Email: gaydar@kinr.kiev.ua
Ukraine, Kyiv, 03680
P. I. Baranskii
Lashkaryov Institute of Semiconductor Physics
Email: gaydar@kinr.kiev.ua
Ukraine, Kyiv, 03028
