Ab initio calculations of phonon dispersion in CdGa2Se4
- Authors: Dzhakhangirli Z.A.1,2, Kerimova T.G.1, Abdullayev N.A.1, Mamedova I.A.1, Mamedov N.T.1
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Affiliations:
- Abdullaev Institute of Physics
- Azerbaijan Technical University
- Issue: Vol 51, No 5 (2017)
- Pages: 556-558
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199818
- DOI: https://doi.org/10.1134/S1063782617050074
- ID: 199818
Cite item
Abstract
The density of phonon states and the phonon dispersion in the Brillouin zone are calculated by the density functional method of. The displacements of atoms in the elementary cell are constructed for vibrations of the A, B, and E symmetries. The calculated frequencies of optical phonons are consistent with the experimentally determined frequencies from the IR-absorption (infrared) and Raman-scattering spectra. In the xy plane, the intersection of low-frequency optical phonons with acoustic phonons is observed.
About the authors
Z. A. Dzhakhangirli
Abdullaev Institute of Physics; Azerbaijan Technical University
Email: taira-kerimova@mail.ru
Azerbaijan, Baku, AZ-1143; Baku, AZ-1143
T. G. Kerimova
Abdullaev Institute of Physics
Author for correspondence.
Email: taira-kerimova@mail.ru
Azerbaijan, Baku, AZ-1143
N. A. Abdullayev
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
Azerbaijan, Baku, AZ-1143
I. A. Mamedova
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
Azerbaijan, Baku, AZ-1143
N. T. Mamedov
Abdullaev Institute of Physics
Email: taira-kerimova@mail.ru
Azerbaijan, Baku, AZ-1143