Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

Abstract

The results of studies of the photoexcitation spectra of epitaxial InN layers formed by molecular-beam epitaxy with the plasma activation of nitrogen are reported. The concentration of free charge carriers in the layers is 10¹⁸–10¹⁹ cm^–3. The photoconductivity, photoluminescence, and absorption spectra exhibit a shift of the long-wavelength threshold of interband transitions in accordance with the Burstein–Moss effect for n-InN with different concentrations of equilibrium electrons. In the samples, absolute negative photoconductivity with a nanosecond relaxation time is observed. The results of photoelectric, absorption, and luminescence spectroscopy experiments are correlated with the technological parameters and electron microscopy data.