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Том 50, № 5 (2016)
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
Aleshkin V., Dubinov A., Kudryavtsev K., Yunin P., Drozdov M., Vikhrova O., Nekorkin S., Zvonkov B.
PDF
(Eng)
Том 52, № 9 (2018)
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Seredin P., Lenshin A., Fedyukin A., Goloshchapov D., Lukin A., Arsentyev I., Zhabotinsky A.
PDF
(Eng)
Том 50, № 4 (2016)
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vasil’evskii I., Pushkarev S., Grekhov M., Vinichenko A., Lavrukhin D., Kolentsova O.
PDF
(Eng)
Том 50, № 2 (2016)
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Galiev G., Klimov E., Grekhov M., Pushkarev S., Lavrukhin D., Maltsev P.
PDF
(Eng)
Том 50, № 2 (2016)
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
Dunaev A., Murin D., Pivovarenok S.
PDF
(Eng)
Том 53, № 10 (2019)
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
Prasolov N., Gutkin A., Brunkov P.
PDF
(Eng)
Том 52, № 12 (2018)
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
Baidus N., Yunin P., Shaleev M., Reunov D., Rykov A., Novikov A., Nekorkin S., Kudryavtsev K., Krasilnik Z., Dubinov A., Aleshkin V., Yurasov D.
PDF
(Eng)
Том 50, № 5 (2016)
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Egorov A., Karachinsky L., Novikov I., Babichev A., Nevedomskiy V., Bugrov V.
PDF
(Eng)
Том 50, № 3 (2016)
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E., Khananova A., Obolensky S., Zemlyakov V., Sveshnikov Y., Egorkin V., Ivanov V., Medvedev G., Smotrin D.
PDF
(Eng)
Том 53, № 16 (2019)
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
Spirina A., Neizvestny I., Shwartz N.
PDF
(Eng)
Том 53, № 10 (2019)
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
Vostokov N., Daniltsev V., Kraev S., Krukov V., Skorokhodov E., Strelchenko S., Shashkin V.
PDF
(Eng)
Том 52, № 10 (2018)
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
PDF
(Eng)
Том 50, № 2 (2016)
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds
Gromov D., Maltsev P., Polevich S.
PDF
(Eng)
Том 53, № 16 (2019)
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Prasolov N., Ermakov I., Gutkin A., Solov’ev V., Dorogin L., Konnikov S., Brunkov P.
PDF
(Eng)
Том 53, № 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
PDF
(Eng)
Том 50, № 2 (2016)
GaAs structures with a gate dielectric based on aluminum-oxide layers
Kalentyeva I., Vikhrova O., Zdoroveyshchev A., Danilov Y., Kudrin A.
PDF
(Eng)
Том 53, № 16 (2019)
Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires
Berdnikov Y., Sibirev N., Koryakin A.
PDF
(Eng)
Том 53, № 8 (2019)
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Kruglov A., Reunov D.
PDF
(Eng)
Том 52, № 9 (2018)
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures
Orlov M., Volkova N., Ivina N., Orlov L.
PDF
(Eng)
Том 50, № 4 (2016)
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
Mintairov S., Emelyanov V., Rybalchenko D., Salii R., Timoshina N., Shvarts M., Kalyuzhnyy N.
PDF
(Eng)
Том 53, № 14 (2019)
J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam
Mikoushkin V., Kalinovskii V., Kontrosh E., Makarevskaya E.
PDF
(Eng)
Том 53, № 8 (2019)
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
Khvostikov V., Kalyuzhnyy N., Mintairov S., Potapovich N., Sorokina S., Shvarts M.
PDF
(Eng)
Том 50, № 5 (2016)
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
Kozlovskiy V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Temiryazev A.
PDF
(Eng)
Том 50, № 4 (2016)
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
Bagraev N., Chaikina E., Danilovskii E., Gets D., Klyachkin L., L’vova T., Malyarenko A.
PDF
(Eng)
Том 50, № 2 (2016)
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Khabibullin R., Yachmenev A., Lavrukhin D., Ponomarev D., Bugayev A., Maltsev P.
PDF
(Eng)
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