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Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
Dunaev A.V., Murin D.B., Pivovarenok S.A.
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
Aleshkin V.Y., Dubinov A.A., Kudryavtsev K.E., Yunin P.A., Drozdov M.N., Vikhrova O.V., Nekorkin S.M., Zvonkov B.N.
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Seredin P.V., Lenshin A.S., Fedyukin A.V., Goloshchapov D.L., Lukin A.N., Arsentyev I.N., Zhabotinsky A.V.
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vasil’evskii I.S., Pushkarev S.S., Grekhov M.M., Vinichenko A.N., Lavrukhin D.V., Kolentsova O.S.
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Galiev G.B., Klimov E.A., Grekhov M.M., Pushkarev S.S., Lavrukhin D.V., Maltsev P.P.
JV Characteristic of pn Structure Formed on n-GaAs Surface by Ar+ Ion Beam
Mikoushkin V.M., Kalinovskii V.S., Kontrosh E.V., Makarevskaya E.A.
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
Khvostikov V.P., Kalyuzhnyy N.A., Mintairov S.A., Potapovich N.S., Sorokina S.V., Shvarts M.Z.
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
Kozlovskiy V.I., Krivobok V.S., Kuznetsov P.I., Nikolaev S.N., Onistchenko E.E., Pruchkina A.A., Temiryazev A.G.
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
Bagraev N.T., Chaikina E.I., Danilovskii E.Y., Gets D.S., Klyachkin L.E., L’vova T.V., Malyarenko A.M.
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Khabibullin R.A., Yachmenev A.E., Lavrukhin D.V., Ponomarev D.S., Bugayev A.S., Maltsev P.P.
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
Mikoushkin V.M., Solonitsyna A.P., Makarevskaya E.A., Novikov D.A.
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
Kumekov S.E., Mustafin A.T., Mussatay S.S.
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface
Bakulin A.V., Kulkova S.E.
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
Dikareva N.V., Zvonkov B.N., Samartsev I.V., Nekorkin S.M., Baidus N.V., Dubinov A.A.
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
Alekseev P.A., Dunaevskiy M.S., Mikhailov A.O., Lebedev S.P., Lebedev A.A., Ilkiv I.V., Khrebtov A.I., Bouravleuv A.D., Cirlin G.E.
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I.
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.I.
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
Seredin P.V., Fedyukin A.V., Terekhov V.A., Barkov K.A., Arsentyev I.N., Bondarev A.D., Fomin E.V., Pikhtin N.A.
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Samartsev I.V., Nekorkin S.M., Zvonkov B.N., Aleshkin V.Y., Dubinov A.A., Pashenkin I.J., Dikareva N.V., Chigineva A.B.
GaAs/InGaAsN heterostructures for multi-junction solar cells
Nikitina E.V., Gudovskikh A.S., Lazarenko A.A., Pirogov E.V., Sobolev M.S., Zelentsov K.S., Morozov I.A., Egorov A.Y.
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Kryzhanovskaya N.V., Maximov M.V., Blokhin S.A., Bobrov M.A., Kulagina M.M., Troshkov S.I., Zadiranov Y.M., Lipovskii A.A., Moiseev E.I., Kudashova Y.V., Livshits D.A., Ustinov V.M., Zhukov A.E.
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
Prasolov N.D., Gutkin A.A., Brunkov P.N.
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
Baidus N.V., Yunin P.A., Shaleev M.V., Reunov D.G., Rykov A.V., Novikov A.V., Nekorkin S.M., Kudryavtsev K.E., Krasilnik Z.F., Dubinov A.A., Aleshkin V.Y., Yurasov D.V.
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