Email this article Improving the functional characteristics of gallium nitride during vapor phase epitaxy
- Authors: Vigdorovich E.N.1
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Affiliations:
- Moscow State University of Instrument Engineering and Computer Science
- Issue: Vol 50, No 13 (2016)
- Pages: 1697-1701
- Section: Materials for Electronic Engineering
- URL: https://journals.rcsi.science/1063-7826/article/view/199191
- DOI: https://doi.org/10.1134/S1063782616130108
- ID: 199191
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Abstract
The mechanisms of gallium nitride crystallization during vapor phase epitaxy are theoretically analyzed. The limited growth in the boundary layer is thoroughly investigated. The conditions for control of the process and intensification of the mass transfer are determined. The effect of the substrate rotation speed on the crystallization mechanism is experimentally studied.
About the authors
E. N. Vigdorovich
Moscow State University of Instrument Engineering and Computer Science
Author for correspondence.
Email: evgvig@mail.ru
Russian Federation, Moscow, 107996
