Email this article Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
- Authors: Shastin V.N.1, Zhukavin R.K.1, Kovalevsky K.A.1, Tsyplenkov V.V.1, Rumyantsev V.V.1, Shengurov D.V.1, Pavlov S.G.2, Shuman V.B.3, Portsel L.M.3, Lodygin A.N.3, Astrov Y.A.3, Abrosimov N.V.4, Klopf J.M.5, Hübers H.2,6
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Institute of Optical Sensor Systems, German Aerospace Center (DLR)
- Ioffe Institute
- Leibniz-Institut für Kristallzüchtung (IKZ)
- Helmholtz-Zentrum Dresden-Rossendorf
- Department of Physics, Humboldt-Universität zu Berlin
- Issue: Vol 53, No 9 (2019)
- Pages: 1234-1237
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206869
- DOI: https://doi.org/10.1134/S1063782619090197
- ID: 206869
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Abstract
The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E), 1s(T2), and 2s(A1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1s(T2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1s(T2) and 1s(E) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed.
About the authors
V. N. Shastin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 607680
R. Kh. Zhukavin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 607680
K. A. Kovalevsky
Institute for Physics of Microstructures, Russian Academy of Sciences
Author for correspondence.
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 607680
V. V. Tsyplenkov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 607680
V. V. Rumyantsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 607680
D. V. Shengurov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: atan4@yandex.ru
Russian Federation, Nizhny Novgorod, 607680
S. G. Pavlov
Institute of Optical Sensor Systems, German Aerospace Center (DLR)
Email: atan4@yandex.ru
Germany, Berlin, 12489
V. B. Shuman
Ioffe Institute
Email: atan4@yandex.ru
Russian Federation, St. Petersburg, 194021
L. M. Portsel
Ioffe Institute
Email: atan4@yandex.ru
Russian Federation, St. Petersburg, 194021
A. N. Lodygin
Ioffe Institute
Email: atan4@yandex.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Astrov
Ioffe Institute
Email: atan4@yandex.ru
Russian Federation, St. Petersburg, 194021
N. V. Abrosimov
Leibniz-Institut für Kristallzüchtung (IKZ)
Email: atan4@yandex.ru
Germany, Berlin, 12489
J. M. Klopf
Helmholtz-Zentrum Dresden-Rossendorf
Email: atan4@yandex.ru
Germany, Dresden, 01328
H.-W. Hübers
Institute of Optical Sensor Systems, German Aerospace Center (DLR); Department of Physics, Humboldt-Universität zu Berlin
Email: atan4@yandex.ru
Germany, Berlin, 12489; Berlin, 12489
