Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices
- Authors: Shuleiko D.V.1, Zabotnov S.V.1,2,3, Zhigunov D.M.1, Zelenina A.A.4, Kamenskih I.A.1,2, Kashkarov P.K.1,2,3
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Affiliations:
- Faculty of Physics
- National Research Center “Kurchatov Institute”
- Faculty of Nanotechnology, Biotechnology, Information Technology, and Cognitive Science
- Novosibirsk State University
- Issue: Vol 51, No 2 (2017)
- Pages: 196-202
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199454
- DOI: https://doi.org/10.1134/S1063782617020208
- ID: 199454
Cite item
Abstract
The photoluminescence properties of silicon nitride and oxide superlattices fabricated by plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a temperature of 1150°C, photoluminescence peaks at about 1.45 eV are recorded. The peaks are defined by exciton recombination in silicon nanocrystals formed upon annealing. Along with the 1.45-eV peaks, a number of peaks defined by recombination at defects at the interface between the nanocrystals and silicon-nitride matrix are detected. The structures annealed at 900°C exhibit a number of photoluminescence peaks in the range 1.3–2.0 eV. These peaks are defined by both the recombination at defects and exciton recombination in amorphous silicon nanoclusters formed at an annealing temperature of 900°C. The observed features of all of the photoluminescence spectra are confirmed by the nature of the photoluminescence kinetics.
About the authors
D. V. Shuleiko
Faculty of Physics
Author for correspondence.
Email: shuleyko.dmitriy@physics.msu.ru
Russian Federation, Moscow, 119991
S. V. Zabotnov
Faculty of Physics; National Research Center “Kurchatov Institute”; Faculty of Nanotechnology, Biotechnology, Information Technology, and Cognitive Science
Email: shuleyko.dmitriy@physics.msu.ru
Russian Federation, Moscow, 119991; Moscow, 119991; Dolgoprudnyi, Moscow region, 141700
D. M. Zhigunov
Faculty of Physics
Email: shuleyko.dmitriy@physics.msu.ru
Russian Federation, Moscow, 119991
A. A. Zelenina
Novosibirsk State University
Email: shuleyko.dmitriy@physics.msu.ru
Russian Federation, Novosibirsk, 630090
I. A. Kamenskih
Faculty of Physics; National Research Center “Kurchatov Institute”
Email: shuleyko.dmitriy@physics.msu.ru
Russian Federation, Moscow, 119991; Moscow, 119991
P. K. Kashkarov
Faculty of Physics; National Research Center “Kurchatov Institute”; Faculty of Nanotechnology, Biotechnology, Information Technology, and Cognitive Science
Email: shuleyko.dmitriy@physics.msu.ru
Russian Federation, Moscow, 119991; Moscow, 119991; Dolgoprudnyi, Moscow region, 141700