Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator
- Authors: Parshina L.S.1, Khramova O.D.1, Novodvorsky O.A.1, Lotin A.A.1, Petukhov I.A.2, Putilin F.N.2, Shcherbachev K.D.3
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Affiliations:
- Institute of Problems of Laser and Information Technologies
- Moscow State University
- National University of Science and Technology “MISIS”
- Issue: Vol 51, No 3 (2017)
- Pages: 407-411
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199675
- DOI: https://doi.org/10.1134/S1063782617030228
- ID: 199675
Cite item
Abstract
SnO2:Sb thin films are grown by pulsed laser deposition with high-speed particle separation on quartz-glass substrates without post-deposition annealing under different deposition conditions in the range of the energy densities on the target from 3.4 to 6.8 J/cm2. Their optical, structural, and electrical properties are studied. It is found that the energy density on the target affects the SnO2:Sb film conductivity and transmittance. The optimum conditions of film growth by the droplet-free pulsed laser deposition method are determined. A resistivity minimum of 1.2 × 10–3 Ω cm is observed at an energy density on the target of 4.6 J/cm2, a substrate temperature of 300°C, and an oxygen pressure of 20 mTorr in the vacuum chamber during deposition.
About the authors
L. S. Parshina
Institute of Problems of Laser and Information Technologies
Author for correspondence.
Email: ParshinaLiubov@mail.ru
Russian Federation, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
O. D. Khramova
Institute of Problems of Laser and Information Technologies
Email: ParshinaLiubov@mail.ru
Russian Federation, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
O. A. Novodvorsky
Institute of Problems of Laser and Information Technologies
Email: ParshinaLiubov@mail.ru
Russian Federation, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
A. A. Lotin
Institute of Problems of Laser and Information Technologies
Email: ParshinaLiubov@mail.ru
Russian Federation, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700
I. A. Petukhov
Moscow State University
Email: ParshinaLiubov@mail.ru
Russian Federation, Moscow, 119991
F. N. Putilin
Moscow State University
Email: ParshinaLiubov@mail.ru
Russian Federation, Moscow, 119991
K. D. Shcherbachev
National University of Science and Technology “MISIS”
Email: ParshinaLiubov@mail.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049