Specific features of the transport properties of the Lu0.1Bi1.9Te3 compound

Abstract

The temperature and electric- and magnetic-field dependences of the resistivity of the R_0.1Bi_1.9Te₃ compound are investigated. It is shown that, in the low-temperature region, variable-range hopping conductivity is realized in this compound. In the temperature range of hopping conductivity, the electrical resistivity decreases with increasing electric-field strength in the sample, which is typical of charge-carrier tunneling from one localized state in the impurity band to another. Investigation of the transverse magnetoresistance revealed the crossover from the parabolic dependence of the magnetoresistance in low fields to the linear dependence in high fields. The established features of the transport properties of the R_0.1Bi_1.9Te₃ compound are characteristic of inhomogeneous and disordered semiconductors.