Investigation into the Memristor Effect in Nanocrystalline ZnO Films
- Authors: Smirnov V.A.1, Tominov R.V.1, Avilov V.I.1, Alyabieva N.I.2, Vakulov Z.E.1, Zamburg E.G.1, Khakhulin D.A.1, Ageev O.A.1
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Affiliations:
- Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
- University of Paris-Sud
- Issue: Vol 53, No 1 (2019)
- Pages: 72-77
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205592
- DOI: https://doi.org/10.1134/S1063782619010202
- ID: 205592
Cite item
Abstract
The results of experimental investigations into the memristor effect and influence of annealing modes on the electrical properties of nanocrystalline zinc-oxide films fabricated by pulsed laser deposition are presented. The possibility of fabricating a nanocrystalline zinc-oxide film by pulsed laser deposition in a broad range of electrical (resistivity from 1.44 × 10–5 to 8.06 × 10–1 Ω cm) and morphological (roughness from 0.43 ± 0.32 to 6.36 ± 0.38 nm) parameters due to the use of post-growth annealing in oxygen (pressure 10–1 and 10–3 Torr, temperature 300 and 800°C, and duration from 1 to 10 h) is presented. It is shown that a nanocrystalline zinc-oxide film 58 ± 2 nm in thickness manifests a stable memristor effect slightly dependent on its morphology—applying a voltage of –2.5 and +4 V leads to switching between states with the resistance 3.3 ± 1.1 × 109 and 8.1 ± 3.4 × 107 Ω, respectively. These results can be used when developing designs and production processes of resistive random-access memory (RRAM) units based on the memristor effect as well as optoelectronics, microelectronics, and nanoelectronics and nanosystem devices.
About the authors
V. A. Smirnov
Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
Author for correspondence.
Email: vasmirnov@sfedu.ru
Russian Federation, Taganrog, 347922
R. V. Tominov
Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
Email: vasmirnov@sfedu.ru
Russian Federation, Taganrog, 347922
V. I. Avilov
Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
Email: vasmirnov@sfedu.ru
Russian Federation, Taganrog, 347922
N. I. Alyabieva
University of Paris-Sud
Email: vasmirnov@sfedu.ru
France, Orsay cedex
Z. E. Vakulov
Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
Email: vasmirnov@sfedu.ru
Russian Federation, Taganrog, 347922
E. G. Zamburg
Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
Email: vasmirnov@sfedu.ru
Russian Federation, Taganrog, 347922
D. A. Khakhulin
Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
Email: vasmirnov@sfedu.ru
Russian Federation, Taganrog, 347922
O. A. Ageev
Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering
Email: vasmirnov@sfedu.ru
Russian Federation, Taganrog, 347922