Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer
- Authors: Banshchikov A.G.1, Illarionov Y.Y.1,2, Vexler M.I.1, Wachter S.2, Sokolov N.S.1
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Affiliations:
- Ioffe Institute
- Vienna University of Technology
- Issue: Vol 53, No 6 (2019)
- Pages: 833-837
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206374
- DOI: https://doi.org/10.1134/S1063782619060034
- ID: 206374
Cite item
Abstract
The currents flowing in metal–CaF2–n-Si and metal–SiO2–CaF2–n-Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the case of a two-layer dielectric can be notably higher within a certain voltage range. Such unexpected behavior is associated with the coexistence of both electron and hole components of the current as well as with the configuration of the SiO2–CaF2 barrier through which tunneling occurs. The results of measurements and explanatory simulation data are presented.
About the authors
A. G. Banshchikov
Ioffe Institute
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. Yu. Illarionov
Ioffe Institute; Vienna University of Technology
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; Vienna, A-1040
M. I. Vexler
Ioffe Institute
Author for correspondence.
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. Wachter
Vienna University of Technology
Email: vexler@mail.ioffe.ru
Austria, Vienna, A-1040
N. S. Sokolov
Ioffe Institute
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021