Email this article Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
- Authors: Lebedev A.A.1, Kozlovski V.V.2, Ivanov P.A.1, Levinshtein M.E.1, Zubov A.V.3
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Affiliations:
- Ioffe Institute
- Department of Experimental Physics, St. Petersburg State Polytechnic University
- National Research University of Information Technologies, Mechanics, and Optics
- Issue: Vol 53, No 10 (2019)
- Pages: 1409-1413
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207249
- DOI: https://doi.org/10.1134/S1063782619100130
- ID: 207249
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Abstract
The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage (operating voltage 1700 V) 4H -SiC Schottky p-n diodes is studied in the microsecond range of the forward-current pulse duration. With increasing irradiation dose Φ, the hole injection threshold steadily grows, and the base-modulation level by minority carriers (holes) becomes lower. At Φ = 1.5 × 1016 cm–2, no hole injection is observed up to forward voltages of ~30 V and forward current densities of j ≈ 9000 A/cm2.
About the authors
A. A. Lebedev
Ioffe Institute
Author for correspondence.
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Kozlovski
Department of Experimental Physics, St. Petersburg State Polytechnic University
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
P. A. Ivanov
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. E. Levinshtein
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Zubov
National Research University of Information Technologies, Mechanics, and Optics
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
