Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
- Authors: Samartsev I.V.1, Nekorkin S.M.1, Zvonkov B.N.1, Aleshkin V.Y.2, Dubinov A.A.2, Pashenkin I.J.1,2, Dikareva N.V.1, Chigineva A.B.1
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Affiliations:
- Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Issue: Vol 52, No 12 (2018)
- Pages: 1564-1567
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204710
- DOI: https://doi.org/10.1134/S1063782618120205
- ID: 204710
Cite item
Abstract
The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of –3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.
About the authors
I. V. Samartsev
Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 603950
S. M. Nekorkin
Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 603950
B. N. Zvonkov
Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 603950
V. Ya. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 607680
A. A. Dubinov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 607680
I. J. Pashenkin
Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 607680
N. V. Dikareva
Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. B. Chigineva
Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod
Email: woterbox@mail.ru
Russian Federation, Nizhny Novgorod, 603950