Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
- Authors: Galiev G.B.1, Grekhov M.M.2, Kitaeva G.K.3, Klimov E.A.1, Klochkov A.N.1, Kolentsova O.S.2, Kornienko V.V.3, Kuznetsov K.A.3, Maltsev P.P.1, Pushkarev S.S.1
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Affiliations:
- Institute of Ultra-High Frequency Semiconductor Electronics
- National Research Nuclear University “MEPhI”
- Faculty of Physics
- Issue: Vol 51, No 3 (2017)
- Pages: 310-317
- Section: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/199560
- DOI: https://doi.org/10.1134/S1063782617030071
- ID: 199560
Cite item
Abstract
The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In0.53Ga0.47As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In0.53Ga0.47As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.
About the authors
G. B. Galiev
Institute of Ultra-High Frequency Semiconductor Electronics
Author for correspondence.
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 117105
M. M. Grekhov
National Research Nuclear University “MEPhI”
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 115409
G. Kh. Kitaeva
Faculty of Physics
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 119991
E. A. Klimov
Institute of Ultra-High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 117105
A. N. Klochkov
Institute of Ultra-High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 117105
O. S. Kolentsova
National Research Nuclear University “MEPhI”
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 115409
V. V. Kornienko
Faculty of Physics
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 119991
K. A. Kuznetsov
Faculty of Physics
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 119991
P. P. Maltsev
Institute of Ultra-High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 117105
S. S. Pushkarev
Institute of Ultra-High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
Russian Federation, Moscow, 117105