On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
- Authors: Virko M.V.1, Kogotkov V.S.1, Leonidov A.A.1, Voronenkov V.V.2, Rebane Y.T.2, Zubrilov A.S.2, Gorbunov R.I.2, Latyshev P.E.2, Bochkareva N.I.2, Lelikov Y.S.2, Tarhin D.V.2, Smirnov A.N.2, Davydov V.Y.2, Shreter Y.G.2
-
Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 5 (2016)
- Pages: 699-704
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197175
- DOI: https://doi.org/10.1134/S1063782616050250
- ID: 197175
Cite item
Abstract
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n+-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in n+-GaN films.
About the authors
M. V. Virko
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
V. S. Kogotkov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. A. Leonidov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
V. V. Voronenkov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. T. Rebane
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. S. Zubrilov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
R. I. Gorbunov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. E. Latyshev
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. I. Bochkareva
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. S. Lelikov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. V. Tarhin
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Smirnov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. Yu. Davydov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. G. Shreter
Ioffe Physical–Technical Institute
Author for correspondence.
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021