On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width
- Authors: Podgornykh S.M.1,2, Yakunin M.V.1,2, Krishtopenko S.S.3, Popov M.R.1, Mikhailov N.N.4, Dvoretskii S.A.4
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Affiliations:
- Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
- Ural Federal University
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 53, No 7 (2019)
- Pages: 919-922
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206488
- DOI: https://doi.org/10.1134/S1063782619070194
- ID: 206488
Cite item
Abstract
The temperature dependences of the Hall coefficient and magnetoresistivity of a p-type HgTe/CdHgTe double quantum well with HgTe layers of critical thickness in the temperature range T = 35–300 K under magnetic fields up to 9 T are investigated. The position of the earlier observed reentrant quantum Hall transition from plateau i = 1 to plateau i = 2 is found to be close to the transition field from light to heavy holes with an increase in the magnetic field in the classical Hall effect. It is found that thermally activated light electrons contribute to the Hall effect along with light and heavy holes at T ≥ 35 K. The activation energy of electrons is estimated from the temperature dependence of the electron concentration as 28 meV, which exceeds the calculated value from the lateral maximum of the valence subband to the edge of the lowest conduction subband, probably because of heterostructure asymmetry.
About the authors
S. M. Podgornykh
Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University
Author for correspondence.
Email: sp@imp.uran.ru
Russian Federation, Yekaterinburg, 620108; Yekaterinburg, 620000
M. V. Yakunin
Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University
Email: sp@imp.uran.ru
Russian Federation, Yekaterinburg, 620108; Yekaterinburg, 620000
S. S. Krishtopenko
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: sp@imp.uran.ru
Russian Federation, Nizhny Novgorod, 603087
M. R. Popov
Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: sp@imp.uran.ru
Russian Federation, Yekaterinburg, 620108
N. N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: sp@imp.uran.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: sp@imp.uran.ru
Russian Federation, Novosibirsk, 630090