Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic
- Authors: Yunusov I.V.1,2, Kagadei V.A.1, Fazleeva A.Y.1, Arykov V.S.1
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Affiliations:
- Micran, Research and Production Company
- Tomsk State University of Control Systems and Radioelectronics
- Issue: Vol 50, No 8 (2016)
- Pages: 1102-1106
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197722
- DOI: https://doi.org/10.1134/S106378261608025X
- ID: 197722
Cite item
Abstract
A modified semiconductor epitaxial heterostructure of a low-barrier diode, which would make it possible to substantially reduce the reverse-current density of the diode without deterioration of its other key parameters, is proposed and implemented. Improvement in the parameters of the reverse branch of the I–V characteristic is attained due to the introduction of heterojunctions into a homostructure making it possible to form a potential barrier in the semiconductor bulk, which is close to the optimal. The results of theoretical calculations using TCAD Synopsys and also the experimental I–V characteristics of diodes fabricated on the basis of homo- and heterostructures are presented. A considerable decrease in the reverse current is shown by the example of diodes with a barrier height of 0.2 and 0.17 V.
About the authors
I. V. Yunusov
Micran, Research and Production Company; Tomsk State University of Control Systems and Radioelectronics
Author for correspondence.
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634041; Tomsk, 634050
V. A. Kagadei
Micran, Research and Production Company
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634041
A. Y. Fazleeva
Micran, Research and Production Company
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634041
V. S. Arykov
Micran, Research and Production Company
Email: yunusov@micran.ru
Russian Federation, Tomsk, 634041