Email this article Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics
- Authors: Vigdorovich E.N.1, Ermoshin I.G.2
-
Affiliations:
- Moscow Technological University (MIREA)
- ZAO “Elma-Malakhit”
- Issue: Vol 51, No 13 (2017)
- Pages: 1681-1685
- Section: Materials for Electronic Engineering
- URL: https://journals.rcsi.science/1063-7826/article/view/202096
- DOI: https://doi.org/10.1134/S1063782617130140
- ID: 202096
Cite item
Open Access
Access granted
Subscription Access
Abstract
The structural quality of GaN/GaInN/Al2O3 heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed.
Keywords
About the authors
E. N. Vigdorovich
Moscow Technological University (MIREA)
Author for correspondence.
Email: evgvig@mail.ru
Russian Federation, Moscow, 119454
I. G. Ermoshin
ZAO “Elma-Malakhit”
Email: evgvig@mail.ru
Russian Federation, Moscow, 124460
