Strained multilayer structures with pseudomorphic GeSiSn layers
- Authors: Timofeev V.A.1, Nikiforov A.I.1,2, Tuktamyshev A.R.1, Yesin M.Y.1, Mashanov V.I.1, Gutakovskii A.K.1, Baidakova N.A.3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- National Research Tomsk Polytechnic University
- Institute for Physics of Microstructures
- Issue: Vol 50, No 12 (2016)
- Pages: 1584-1588
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198788
- DOI: https://doi.org/10.1134/S106378261612023X
- ID: 198788
Cite item
Abstract
The temperature and composition dependences of the critical thickness of the 2D–3D transition for a GeSiSn film on Si(100) have been studied. The regularities of the formation of multilayer structures with pseudomorphic GeSiSn layers directly on a Si substrate, without relaxed buffer layers, were investigated for the first time. The possibility of forming multilayer structures based on pseudomorphic GeSiSn layers has been shown and the lattice parameters have been determined using transmission electron microscopy. The grown structures demonstrate photoluminescence for Sn contents from 3.5 to 5% in GeSiSn layers.
About the authors
V. A. Timofeev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: Vyacheslav.t@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. I. Nikiforov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; National Research Tomsk Polytechnic University
Email: Vyacheslav.t@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Tomsk, 634050
A. R. Tuktamyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: Vyacheslav.t@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. Yu. Yesin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: Vyacheslav.t@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. I. Mashanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: Vyacheslav.t@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. K. Gutakovskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: Vyacheslav.t@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
N. A. Baidakova
Institute for Physics of Microstructures
Email: Vyacheslav.t@isp.nsc.ru
Russian Federation, Nizhny Novgorod, 607680