Electron Effective Mass and g Factor in Wide HgTe Quantum Wells
- Authors: Gudina S.V.1, Neverov V.N.1, Ilchenko E.V.1, Bogolubskii A.S.1, Harus G.I.1, Shelushinina N.G.1, Podgornykh S.M.1,2, Yakunin M.V.1,2, Mikhailov N.N.3,4, Dvoretsky S.A.3,5
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Affiliations:
- Mikheev Institute of Metal Physics, Ural Branch
- Yeltsin Ural Federal University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- National Research Tomsk State University
- Issue: Vol 52, No 1 (2018)
- Pages: 12-18
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/202191
- DOI: https://doi.org/10.1134/S1063782618010098
- ID: 202191
Cite item
Abstract
The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.
About the authors
S. V. Gudina
Mikheev Institute of Metal Physics, Ural Branch
Author for correspondence.
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
V. N. Neverov
Mikheev Institute of Metal Physics, Ural Branch
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
E. V. Ilchenko
Mikheev Institute of Metal Physics, Ural Branch
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
A. S. Bogolubskii
Mikheev Institute of Metal Physics, Ural Branch
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
G. I. Harus
Mikheev Institute of Metal Physics, Ural Branch
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
N. G. Shelushinina
Mikheev Institute of Metal Physics, Ural Branch
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
S. M. Podgornykh
Mikheev Institute of Metal Physics, Ural Branch; Yeltsin Ural Federal University
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137; Yekaterinburg, 620002
M. V. Yakunin
Mikheev Institute of Metal Physics, Ural Branch; Yeltsin Ural Federal University
Email: svpopova@imp.uran.ru
Russian Federation, Yekaterinburg, 620137; Yekaterinburg, 620002
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: svpopova@imp.uran.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
S. A. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch; National Research Tomsk State University
Email: svpopova@imp.uran.ru
Russian Federation, Novosibirsk, 630090; Tomsk, 634050