Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.

About the authors

R. Kh. Zhukavin

Institute for Physics of Microstructures, Russian Academy of Sciences

Author for correspondence.
Email: zhur@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680

S. G. Pavlov

Institute of Optical Sensor Systems, German Aerospace Center (DLR)

Email: zhur@ipmras.ru
Germany, Berlin, 12489

A. Pohl

Department of Physics, Humboldt-Universität zu Berlin

Email: zhur@ipmras.ru
Germany, Berlin, 12489

N. V. Abrosimov

Leibniz-Insitut für Kristallzüchtung (IKZ)

Email: zhur@ipmras.ru
Germany, Berlin, 12489

H. Riemann

Leibniz-Insitut für Kristallzüchtung (IKZ)

Email: zhur@ipmras.ru
Germany, Berlin, 12489

B. Redlich

Radboud University Nijmegen, Institute for Molecules and Materials, FELIX Laboratory

Email: zhur@ipmras.ru
Netherlands, ED Nijmegen, 6525

H.-W. Hübers

Institute of Optical Sensor Systems, German Aerospace Center (DLR); Department of Physics, Humboldt-Universität zu Berlin

Email: zhur@ipmras.ru
Germany, Berlin, 12489; Berlin, 12489

V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: zhur@ipmras.ru
Russian Federation, Nizhny Novgorod, 607680


Copyright (c) 2019 Pleiades Publishing, Ltd.

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies