Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium
- Authors: Vlasov A.S.1, Karlina L.B.1, Komissarenko F.E.2,3, Ankudinov A.V.1,2
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Affiliations:
- Ioffe Institute
- ITMO University
- St. Petersburg Academic University
- Issue: Vol 51, No 5 (2017)
- Pages: 582-585
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/199843
- DOI: https://doi.org/10.1134/S1063782617050244
- ID: 199843
Cite item
Abstract
The results of studies of the surface of GaAs in the presence of indium and phosphorus surfactants are reported. It is shown that, as a result of their diffusion (annealing) at a temperature of 650–670°C, clusters enriched with indium are formed in the GaAs surface region. The clusters can be seen as bright spots in an image obtained by a scanning electron microscope with the use of an in-lens detector. At the same time, studies of the morphology of this surface with an atomic-force microscope show a decrease in the root-meansquare roughness of the surface after annealing (diffusion), which is indicative of the incorporation of In atoms into the GaAs crystal lattice. The clusters are responsible for changes in the Raman spectra. Specifically, an increase in the signal intensity due to surface-enhanced Raman scattering and a shift of the vibration frequency in the surface region are observed. It is found that cluster formation is defined by the crystallographic orientation of the surface and by the technological conditions of surface preparation.
About the authors
A. S. Vlasov
Ioffe Institute
Author for correspondence.
Email: vlasov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. B. Karlina
Ioffe Institute
Email: vlasov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
F. E. Komissarenko
ITMO University; St. Petersburg Academic University
Email: vlasov@scell.ioffe.ru
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021
A. V. Ankudinov
Ioffe Institute; ITMO University
Email: vlasov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101