Email this article Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells
- Authors: Rumyantsev V.V.1,2, Fadeev M.A.1,2, Morozov S.V.1,2, Dubinov A.A.1,2, Kudryavtsev K.E.1,2, Kadykov A.M.1,3, Tuzov I.V.2, Dvoretskii S.A.4, Mikhailov N.N.4,5, Gavrilenko V.I.5,3, Teppe F.3
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Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Laboratoire Charles Coulomb (L2C)
- Institute for Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 50, No 12 (2016)
- Pages: 1651-1656
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198998
- DOI: https://doi.org/10.1134/S1063782616120174
- ID: 198998
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Abstract
The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm2) at 20 K. In the p-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.
About the authors
V. V. Rumyantsev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Author for correspondence.
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
M. A. Fadeev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. V. Morozov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. A. Dubinov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. E. Kudryavtsev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. M. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C)
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950; Montpellier
I. V. Tuzov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Nizhny Novgorod, 603950
S. A. Dvoretskii
Institute for Semiconductor Physics, Siberian Branch
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Novosibirsk, 630090
N. N. Mikhailov
Institute for Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. I. Gavrilenko
Novosibirsk State University; Laboratoire Charles Coulomb (L2C)
Email: rumyantsev@ipm.sci-nnov.ru
Russian Federation, Novosibirsk, 630090; Montpellier
F. Teppe
Laboratoire Charles Coulomb (L2C)
Email: rumyantsev@ipm.sci-nnov.ru
France, Montpellier
