Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation
- Authors: Tomosh K.N.1, Pavlov A.Y.1, Pavlov V.Y.1, Khabibullin R.A.1, Arutyunyan S.S.1, Maltsev P.P.1
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Affiliations:
- Institute of Ultra-High-Frequency Semiconductor Electronics
- Issue: Vol 50, No 10 (2016)
- Pages: 1416-1420
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/198228
- DOI: https://doi.org/10.1134/S1063782616100225
- ID: 198228
Cite item
Abstract
The optimum mode of the in situ plasma-chemical etching of a Si3N4 passivating layer in C3F8/O2 medium is chosen for the case of fabricating AlGaN/AlN/GaN НЕМТs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si3N4 growth together with the heterostructure in one process on the AlGaN/AlN/GaN НЕМТ characteristics, transistors with gates without the insulator and with gates through Si3N4 slits are fabricated. The highest drain current of the AlGaN/AlN/GaN НЕМТ at 0 V at the gate is shown to be 1.5 times higher in the presence of Si3N4 than without it.
About the authors
K. N. Tomosh
Institute of Ultra-High-Frequency Semiconductor Electronics
Author for correspondence.
Email: sky77781@mail.ru
Russian Federation, Moscow, 117105
A. Yu. Pavlov
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
Russian Federation, Moscow, 117105
V. Yu. Pavlov
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
Russian Federation, Moscow, 117105
R. A. Khabibullin
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
Russian Federation, Moscow, 117105
S. S. Arutyunyan
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
Russian Federation, Moscow, 117105
P. P. Maltsev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: sky77781@mail.ru
Russian Federation, Moscow, 117105