Laser (λ = 809 nm) power converter based on GaAs


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Laser-power converters with a wavelength of λ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of liquid-phase epitaxy (LPE). Photovoltaic modules with an operating voltage of 4 V for converting radiation of various densities are developed and tested. Two approaches—without the use of optical concentrating systems and with the use of Fresnel lenses are investigated. A monochromatic conversion efficiency exceeding 44% is attained with a photovoltaic module based on 64 laser-radiation converters 0.04 cm2 in area and a concentrating system made of a quartz-lens matrix.

作者简介

V. Khvostikov

Ioffe Physical–Technical Institute

编辑信件的主要联系方式.
Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

S. Sorokina

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Potapovich

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

O. Khvostikova

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Timoshina

Ioffe Physical–Technical Institute

Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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