Laser (λ = 809 nm) power converter based on GaAs
- Authors: Khvostikov V.P.1, Sorokina S.V.1, Potapovich N.S.1, Khvostikova O.A.1, Timoshina N.K.1
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Affiliations:
- Ioffe Physical–Technical Institute
- Issue: Vol 51, No 5 (2017)
- Pages: 645-648
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199910
- DOI: https://doi.org/10.1134/S1063782617050128
- ID: 199910
Cite item
Abstract
Laser-power converters with a wavelength of λ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of liquid-phase epitaxy (LPE). Photovoltaic modules with an operating voltage of 4 V for converting radiation of various densities are developed and tested. Two approaches—without the use of optical concentrating systems and with the use of Fresnel lenses are investigated. A monochromatic conversion efficiency exceeding 44% is attained with a photovoltaic module based on 64 laser-radiation converters 0.04 cm2 in area and a concentrating system made of a quartz-lens matrix.
About the authors
V. P. Khvostikov
Ioffe Physical–Technical Institute
Author for correspondence.
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Sorokina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. S. Potapovich
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. A. Khvostikova
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. Kh. Timoshina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021