Laser (λ = 809 nm) power converter based on GaAs
- 作者: Khvostikov V.P.1, Sorokina S.V.1, Potapovich N.S.1, Khvostikova O.A.1, Timoshina N.K.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 51, 编号 5 (2017)
- 页面: 645-648
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199910
- DOI: https://doi.org/10.1134/S1063782617050128
- ID: 199910
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详细
Laser-power converters with a wavelength of λ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of liquid-phase epitaxy (LPE). Photovoltaic modules with an operating voltage of 4 V for converting radiation of various densities are developed and tested. Two approaches—without the use of optical concentrating systems and with the use of Fresnel lenses are investigated. A monochromatic conversion efficiency exceeding 44% is attained with a photovoltaic module based on 64 laser-radiation converters 0.04 cm2 in area and a concentrating system made of a quartz-lens matrix.
作者简介
V. Khvostikov
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Sorokina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Potapovich
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
O. Khvostikova
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Timoshina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
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