Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen
- Authors: Ivanova E.V.1, Sitnikova A.A.1, Aleksandrov O.V.2, Zamoryanskaya M.V.1
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Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg State Electrotechnical University LETI
- Issue: Vol 50, No 6 (2016)
- Pages: 791-794
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197264
- DOI: https://doi.org/10.1134/S1063782616060099
- ID: 197264
Cite item
Abstract
It is found for the first time that silicon nanoclusters are formed in the surface layer of thermal silicon dioxide under high-temperature annealing (T = 1150°C) in dried nitrogen. Analysis of the cathodoluminescence spectra shows that an imperfect surface layer appears upon such annealing of silicon dioxide, with silicon nanoclusters formed in this layer upon prolonged annealing. Transmission electron microscopy demonstrated that the silicon clusters are 3–5.5 nm in size and lie at a depth of about 10 nm from the surface. Silicon from the thermal film of silicon dioxide serves as the material from which the silicon nanoclusters are formed. This method of silicon-nanocluster formation is suggested for the first time.
About the authors
E. V. Ivanova
Ioffe Physical–Technical Institute
Author for correspondence.
Email: Ivanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Sitnikova
Ioffe Physical–Technical Institute
Email: Ivanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. V. Aleksandrov
St. Petersburg State Electrotechnical University LETI
Email: Ivanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 197376
M. V. Zamoryanskaya
Ioffe Physical–Technical Institute
Email: Ivanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021