GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
- Authors: Dikareva N.V.1, Zvonkov B.N.1, Samartsev I.V.1, Nekorkin S.M.1, Baidus N.V.1, Dubinov A.A.1,2
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Affiliations:
- National Research Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Issue: Vol 53, No 12 (2019)
- Pages: 1709-1711
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207423
- DOI: https://doi.org/10.1134/S1063782619160085
- ID: 207423
Cite item
Abstract
The results of studying a GaAs-based laser with InGaAs waveguide quantum wells, which operates at room temperature in the electric-pumping mode, are presented. The minimal generation threshold is 15 A. Stable lasing at a wavelength of 1010 nm is attained, and the width of the radiation pattern in the plane perpendicular to the structure layers is (10 ± 2)°.
Keywords
About the authors
N. V. Dikareva
National Research Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
B. N. Zvonkov
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
I. V. Samartsev
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
S. M. Nekorkin
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
N. V. Baidus
National Research Lobachevsky State University of Nizhny Novgorod
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
A. A. Dubinov
National Research Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950