Email this article On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes
- Authors: Davydov S.Y.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 53, No 5 (2019)
- Pages: 699-702
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/206211
- DOI: https://doi.org/10.1134/S106378261905004X
- ID: 206211
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Abstract
Two different procedures for estimating the electron affinity of SiC polytypes and the interrelation of these procedures with the results of ab initio calculations are discussed. Simple corrections to the Shockley–Anderson rules for the constructions of band diagrams of heterojunctions are proposed.
About the authors
S. Yu. Davydov
Ioffe Institute
Author for correspondence.
Email: Sergei_Davydov@mail.ru
Russian Federation, St. Petersburg, 194021
