Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix
- Authors: Castro R.A.1, Khanin S.D.1,2, Smirnov A.P.1, Kononov A.A.1
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Affiliations:
- Herzen State Pedagogical University of Russia
- Budyonny Military Academy of Communications
- Issue: Vol 53, No 12 (2019)
- Pages: 1646-1650
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/207385
- DOI: https://doi.org/10.1134/S1063782619160127
- ID: 207385
Cite item
Abstract
The results of investigating charge-transfer processes in thin layers of a vitreous system (As2Se3)100 – xBix are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies E1 = 0.12 ± 0.01 eV and E2 = 0.23 ± 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states (N), the hopping length (Rω), and the largest height of the potential barrier (WM).
About the authors
R. A. Castro
Herzen State Pedagogical University of Russia
Email: rakot1991@mail.ru
Russian Federation, St. Petersburg, 191186
S. D. Khanin
Herzen State Pedagogical University of Russia; Budyonny Military Academy of Communications
Email: rakot1991@mail.ru
Russian Federation, St. Petersburg, 191186; St. Petersburg, 194064
A. P. Smirnov
Herzen State Pedagogical University of Russia
Email: rakot1991@mail.ru
Russian Federation, St. Petersburg, 191186
A. A. Kononov
Herzen State Pedagogical University of Russia
Author for correspondence.
Email: rakot1991@mail.ru
Russian Federation, St. Petersburg, 191186