Email this article Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion
- Authors: Klimov A.E.1,2, Akimov A.N.1, Akhundov I.O.1, Golyashov V.A.1,3, Gorshkov D.V.1, Ishchenko D.V.1, Sidorov G.Y.1, Suprun S.P.1, Tarasov A.S.1, Epov V.S.1, Tereshchenko O.E.1,3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- Novosibirsk State University
- Issue: Vol 53, No 9 (2019)
- Pages: 1182-1186
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206738
- DOI: https://doi.org/10.1134/S1063782619090094
- ID: 206738
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Abstract
The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 105 are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.
About the authors
A. E. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Author for correspondence.
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073
A. N. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. O. Akhundov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. A. Golyashov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
D. V. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. V. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
G. Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
S. P. Suprun
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. S. Tarasov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. S. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
O. E. Tereshchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: klimov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
