Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer
- Authors: Mikoushkin V.M.1, Bryzgalov V.V.1, Nikonov S.Y.1, Solonitsyna A.P.1, Marchenko D.E.2,3
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Affiliations:
- Ioffe Institute
- Technische Universität Dresden
- Helmholtz-Zentrum BESSY II
- Issue: Vol 52, No 5 (2018)
- Pages: 593-596
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
- URL: https://journals.rcsi.science/1063-7826/article/view/203100
- DOI: https://doi.org/10.1134/S1063782618050214
- ID: 203100
Cite item
Abstract
Detailed information on GaAs oxide properties is important for solving the problem of passivating and dielectric layers in the GaAs-based electronics. The elemental and chemical compositions of the native oxide layer grown on the atomically clean surface of an n-GaAs (100) wafer etched by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy. It has been revealed that the oxide layer is essentially enriched in the Ga2O3 phase which is known to be a quite good dielectric as compared to As2O3. The gallium to arsenic ratio reaches the value as high as [Ga]/[As] = 1.5 in the course of oxidation. The Ga-enrichment occurs supposedly due to diffusion away of As released in preferential oxidation of Ga atoms. A band diagram was constructed for the native oxide nanolayer on the n-GaAs wafer. It has been shown that this natural nanostructure has features of a p–n heterojunction.
About the authors
V. M. Mikoushkin
Ioffe Institute
Author for correspondence.
Email: V.Mikoushkin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Bryzgalov
Ioffe Institute
Email: V.Mikoushkin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. Yu. Nikonov
Ioffe Institute
Email: V.Mikoushkin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. P. Solonitsyna
Ioffe Institute
Email: V.Mikoushkin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. E. Marchenko
Technische Universität Dresden; Helmholtz-Zentrum BESSY II
Email: V.Mikoushkin@mail.ioffe.ru
Germany, Dresden, D-01062; Berlin, D-12489