On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
- Authors: Seredin P.V.1,2, Fedyukin A.V.1, Terekhov V.A.1, Barkov K.A.1, Arsentyev I.N.3, Bondarev A.D.3, Fomin E.V.3,4, Pikhtin N.A.3,4
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Affiliations:
- Voronezh State University
- Ural Federal University
- Ioffe Institute
- St. Petersburg State Electrotechnical University “LETI”
- Issue: Vol 53, No 11 (2019)
- Pages: 1550-1557
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207333
- DOI: https://doi.org/10.1134/S1063782619110174
- ID: 207333
Cite item
Abstract
Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different degrees. It is shown that growth on substrates misoriented with respect to the 〈100〉 direction to different degrees results in the formation of AlN films with different phase compositions and crystal states. An increase in the degree of misorientation of the GaAs(100) substrate used for growth influences both the structural quality of AlN nanofilms and their electronic structure, surface morphology, and optical properties. Thus, the morphology, surface composition, and optical functional characteristics of AlN/GaAs(100) heterophase systems can be controlled using differently misoriented GaAs(100) substrates.
Keywords
About the authors
P. V. Seredin
Voronezh State University; Ural Federal University
Author for correspondence.
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006; Ekaterinburg, 620002
A. V. Fedyukin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
V. A. Terekhov
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
K. A. Barkov
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
I. N. Arsentyev
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
A. D. Bondarev
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
E. V. Fomin
Ioffe Institute; St. Petersburg State Electrotechnical University “LETI”
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197022
N. A. Pikhtin
Ioffe Institute; St. Petersburg State Electrotechnical University “LETI”
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197022