Email this article Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires
- Authors: Trukhin V.N.1, Bouravleuv A.D.2, Mustafin I.A.1,3, Cirlin G.E.2, Kakko J.P.4, Lipsanen H.4
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Affiliations:
- Ioffe Institute
- St. Petersburg Academic University
- ITMO
- Department of Electronics and Nanoengineering
- Issue: Vol 52, No 1 (2018)
- Pages: 19-23
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/202198
- DOI: https://doi.org/10.1134/S1063782618010244
- ID: 202198
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Abstract
Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.
About the authors
V. N. Trukhin
Ioffe Institute
Author for correspondence.
Email: valera.truchin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. D. Bouravleuv
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Mustafin
Ioffe Institute; ITMO
Email: valera.truchin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
G. E. Cirlin
St. Petersburg Academic University
Email: valera.truchin@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
J. P. Kakko
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
Finland, Espoo, FIN-02150
H. Lipsanen
Department of Electronics and Nanoengineering
Email: valera.truchin@mail.ioffe.ru
Finland, Espoo, FIN-02150
