Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
- Authors: Parkhomenko Y.A.1, Dement’ev P.A.1, Moiseev K.D.1
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Affiliations:
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 7 (2016)
- Pages: 976-979
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197511
- DOI: https://doi.org/10.1134/S1063782616070198
- ID: 197511
Cite item
Abstract
The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range T = 450–465°C. The average dimensions of the quantum dots correspond to a height of h = 3 nm and a base dimension of D = 30 nm; the surface density is 3 × 109 cm–2.
About the authors
Ya. A. Parkhomenko
Ioffe Physical–Technical Institute
Email: mkd@iropt2.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
P. A. Dement’ev
Ioffe Physical–Technical Institute
Email: mkd@iropt2.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
K. D. Moiseev
Ioffe Physical–Technical Institute
Author for correspondence.
Email: mkd@iropt2.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021