Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

Abstract

The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 10¹⁴ cm^–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.