Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures
- Authors: Yafarov R.K.1, Gornev E.S.2, Orlov S.N.2, Timoshenkov S.P.3, Timoshenkov V.P.3, Timoshenkov A.S.3
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch
- Molecular Electronics Research Institute
- National Research University Moscow Institute of Electronic Technology (MIET)
- Issue: Vol 50, No 13 (2016)
- Pages: 1726-1728
- Section: Microelectronic and Nanoelectronic Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/199222
- DOI: https://doi.org/10.1134/S106378261613011X
- ID: 199222
Cite item
Abstract
A nanocarbon-emitter technology for integrated field-emission elements has been developed. The modes in which various carbon film structures of diamond, graphite, and graphene-like types are produced were determined. The low-temperature method of obtaining ultradispersed diamonds was examined. It is shown that the high-emission properties of nanodiamond-graphite emitters result from the self-organization of diamond nanocrystals in a graphite film in the course of deposition from ethanol vapor at low pressure with the use of a strongly nonequilibrium microwave plasma. The following parameters of integrated field-emission diodes were obtained: emission threshold of 2.5 V/μm and emission current density of 1.75 A/cm2. The highest current density of more than 20 A/cm2 was obtained in a study of blade-type emitters.
About the authors
R. K. Yafarov
Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch
Email: valeri04@hotmail.com
Russian Federation, Saratov
E. S. Gornev
Molecular Electronics Research Institute
Email: valeri04@hotmail.com
Russian Federation, Moscow
S. N. Orlov
Molecular Electronics Research Institute
Email: valeri04@hotmail.com
Russian Federation, Moscow
S. P. Timoshenkov
National Research University Moscow Institute of Electronic Technology (MIET)
Email: valeri04@hotmail.com
Russian Federation, Moscow
V. P. Timoshenkov
National Research University Moscow Institute of Electronic Technology (MIET)
Author for correspondence.
Email: valeri04@hotmail.com
Russian Federation, Moscow
A. S. Timoshenkov
National Research University Moscow Institute of Electronic Technology (MIET)
Email: valeri04@hotmail.com
Russian Federation, Moscow