Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
- Authors: Shobolova T.A.1, Korotkov A.V.1, Petryakova E.V.1, Lipatnikov A.V.1, Puzanov A.S.1, Obolensky S.V.1, Kozlov V.A.2
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Issue: Vol 53, No 10 (2019)
- Pages: 1353-1356
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207201
- DOI: https://doi.org/10.1134/S1063782619100178
- ID: 207201
Cite item
Abstract
Approaches to solving the problem of the development of efficient bipolar and heterobipolar transistors operating at radio- and ultrahigh frequencies (0.1–10 GHz), which could be used as active elements of modern Si-based and GaAs-based radiation-resistant analog-digital integrated circuits, are discussed. Comparison of the radiation resistance of prospective “lateral” Si-based bipolar and “vertical” AlGaAs/GaAs heterobipolar transistors with a characteristic base thickness of 70–350 nm is performed. The features of the electron transport in active transistor regions are analyzed in detail and the influence of a surge in the velocity and the diffusion of quasi-ballistic electrons on an increase in the radiation resistance of transistors is evaluated.
About the authors
T. A. Shobolova
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Korotkov
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
E. V. Petryakova
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Lipatnikov
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. S. Puzanov
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
S. V. Obolensky
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. A. Kozlov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603087