电邮这篇文章 Magnetoimpedance Effect in a SOI-Based Structure
- 作者: Smolyakov D.A.1, Tarasov A.S.1, Yakovlev I.A.1,2, Volochaev M.N.1,2
-
隶属关系:
- Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Science and Technology
- 期: 卷 53, 编号 14 (2019)
- 页面: 1964-1966
- 栏目: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207541
- DOI: https://doi.org/10.1134/S1063782619140215
- ID: 207541
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
作者简介
D. Smolyakov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: sda88@iph.krasn.ru
俄罗斯联邦, Krasnoyarsk, 660036
A. Tarasov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: taras@iph.krasn.ru
俄罗斯联邦, Krasnoyarsk, 660036
I. Yakovlev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
编辑信件的主要联系方式.
Email: yia@iph.krasn.ru
俄罗斯联邦, Krasnoyarsk, 660036; Krasnoyarsk, 660014
M. Volochaev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
编辑信件的主要联系方式.
Email: volochaev91@mail.ru
俄罗斯联邦, Krasnoyarsk, 660036; Krasnoyarsk, 660014
补充文件
