Отправить статью по E-mail Magnetoimpedance Effect in a SOI-Based Structure
- Авторы: Smolyakov D.1, Tarasov A.1, Yakovlev I.1,2, Volochaev M.1,2
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Учреждения:
- Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Science and Technology
- Выпуск: Том 53, № 14 (2019)
- Страницы: 1964-1966
- Раздел: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207541
- DOI: https://doi.org/10.1134/S1063782619140215
- ID: 207541
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Аннотация
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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Об авторах
D. Smolyakov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: sda88@iph.krasn.ru
Россия, Krasnoyarsk, 660036
A. Tarasov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk, 660036
I. Yakovlev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Автор, ответственный за переписку.
Email: yia@iph.krasn.ru
Россия, Krasnoyarsk, 660036; Krasnoyarsk, 660014
M. Volochaev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Автор, ответственный за переписку.
Email: volochaev91@mail.ru
Россия, Krasnoyarsk, 660036; Krasnoyarsk, 660014
