Email this article Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation
- Authors: Bondarenko V.B.1, Filimonov A.V.1
-
Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 51, No 10 (2017)
- Pages: 1321-1325
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/201349
- DOI: https://doi.org/10.1134/S1063782617100062
- ID: 201349
Cite item
Open Access
Access granted
Subscription Access
Abstract
The localization behavior of a two-dimensional electron gas confined at the surface of a heavily doped semiconductor under conditions of the “natural” size effect in the space-charge region is investigated. The scattering of low-energy electrons by the chaotic potential formed at the surface by point charges of ionized impurities is analyzed and the electron mean free path is determined. A criterion for strong localization in this two-dimensional electron system is obtained on the basis of the Ioffe–Regel criterion.
About the authors
V. B. Bondarenko
Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: enter@spbstu.ru
Russian Federation, St. Petersburg, 195251
A. V. Filimonov
Peter the Great St. Petersburg Polytechnic University
Email: enter@spbstu.ru
Russian Federation, St. Petersburg, 195251
