Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma
- Authors: Okhapkin A.I.1, Yunin P.A.1, Drozdov M.N.1, Kraev S.A.1, Skorokhodov E.V.1, Shashkin V.I.1
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Issue: Vol 52, No 11 (2018)
- Pages: 1473-1476
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204491
- DOI: https://doi.org/10.1134/S1063782618110180
- ID: 204491
Cite item
Abstract
The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C2F5Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied. It is established that the smoothest etching profile is implemented when using a large freon flow and low capacitive power. Etching anisotropy is retained in such a mode at a depth of 7 μm with an etching rate of 230 nm/min.
About the authors
A. I. Okhapkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Author for correspondence.
Email: andy-ohapkin@yandex.ru
Russian Federation, Afonino, Nizhny Novgorod oblast, 603087
P. A. Yunin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: andy-ohapkin@yandex.ru
Russian Federation, Afonino, Nizhny Novgorod oblast, 603087
M. N. Drozdov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: andy-ohapkin@yandex.ru
Russian Federation, Afonino, Nizhny Novgorod oblast, 603087
S. A. Kraev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: andy-ohapkin@yandex.ru
Russian Federation, Afonino, Nizhny Novgorod oblast, 603087
E. V. Skorokhodov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: andy-ohapkin@yandex.ru
Russian Federation, Afonino, Nizhny Novgorod oblast, 603087
V. I. Shashkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: andy-ohapkin@yandex.ru
Russian Federation, Afonino, Nizhny Novgorod oblast, 603087