Email this article Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures
- Authors: Musaev A.M.1
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Issue: Vol 50, No 4 (2016)
- Pages: 462-465
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196976
- DOI: https://doi.org/10.1134/S1063782616040175
- ID: 196976
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Abstract
Experimental results on the effects of changes in the impact-ionization current in silicon diffusion p+–n–n+ and n+–p–p+ structures upon nonuniform heating are presented. It is shown that the revealed effects are associated with the transformation of band energy levels caused by thermoelastic stresses of the structures.
About the authors
A. M. Musaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Author for correspondence.
Email: akhmed-musaev@yandex.ru
Russian Federation, ul. Yaragskogo 94, Makhachkala, 367003
