High-temperature diffusion of magnesium in dislocation-free silicon
- Authors: Shuman V.B.1, Astrov Y.A.1, Lodygin A.N.1, Portsel L.M.1
-
Affiliations:
- Ioffe Institute
- Issue: Vol 51, No 8 (2017)
- Pages: 1031-1033
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/200961
- DOI: https://doi.org/10.1134/S1063782617080292
- ID: 200961
Cite item
Abstract
The diffusion doping of dislocation-free single-crystal silicon with magnesium is studied in the temperature range 1000–1200°C. The conventional sandwich method is used as the doping method. It is found that the diffusion coefficient of magnesium is described by a universal Arrhenius curve in the extended temperature range 600–1200°C, with data earlier obtained for the range 600–800°C taken into consideration. The relatively low activation energy of diffusion transport (1.83 eV) is indicative of the interstitial mechanism of impurity diffusion.
About the authors
V. B. Shuman
Ioffe Institute
Author for correspondence.
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Astrov
Ioffe Institute
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Lodygin
Ioffe Institute
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. M. Portsel
Ioffe Institute
Email: Shuman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021