On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
- Authors: Zubrilov A.S.1, Gorbunov R.I.1, Latishev F.E.1, Bochkareva N.I.1, Lelikov Y.S.1, Tarkhin D.V.1, Smirnov A.N.1, Davydov V.Y.1, Sheremet I.A.2, Shreter Y.G.1, Voronenkov V.V.1, Virko M.V.3, Kogotkov V.S.3, Leonidov A.A.3, Pinchuk A.V.1
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Affiliations:
- Ioffe Physical–Technical Institute
- Financial University under the Government of the Russian Federation
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 51, No 1 (2017)
- Pages: 115-121
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199365
- DOI: https://doi.org/10.1134/S1063782617010249
- ID: 199365
Cite item
Abstract
The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm2. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm2 at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.
About the authors
A. S. Zubrilov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
R. I. Gorbunov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
F. E. Latishev
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. I. Bochkareva
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Y. S. Lelikov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. V. Tarkhin
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Smirnov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. Y. Davydov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Sheremet
Financial University under the Government of the Russian Federation
Email: y.shreter@mail.ioffe.ru
Russian Federation, Moscow, 125993
Y. G. Shreter
Ioffe Physical–Technical Institute
Author for correspondence.
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Voronenkov
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. V. Virko
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
V. S. Kogotkov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. A. Leonidov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. V. Pinchuk
Ioffe Physical–Technical Institute
Email: y.shreter@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021