Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
- Authors: Seredin P.V.1, Fedyukin A.V.1, Arsentyev I.N.2, Vavilova L.S.2, Tarasov I.S.2, Prutskij T.3, Leiste H.4, Rinke M.4
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Affiliations:
- Voronezh State University
- Ioffe Physical–Technical Institute
- Instituto de Ciencias
- Karlsruhe Nano Micro Facility
- Issue: Vol 50, No 7 (2016)
- Pages: 853-859
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/197347
- DOI: https://doi.org/10.1134/S106378261607023X
- ID: 197347
Cite item
Abstract
The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.
About the authors
P. V. Seredin
Voronezh State University
Author for correspondence.
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
A. V. Fedyukin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
I. N. Arsentyev
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
L. S. Vavilova
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
I. S. Tarasov
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
T. Prutskij
Instituto de Ciencias
Email: paul@phys.vsu.ru
Mexico, Puebla, Pue., 72050
H. Leiste
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344
M. Rinke
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344