Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds
- Authors: Gromov D.V.1, Maltsev P.P.2, Polevich S.A.3
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Affiliations:
- National Research Nuclear University “MEPhI”
- Institute of Ultra-High-Frequency Semiconductor Electronics
- ENPO Specialized Electron Systems
- Issue: Vol 50, No 2 (2016)
- Pages: 222-227
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196789
- DOI: https://doi.org/10.1134/S1063782616020093
- ID: 196789
Cite item
Abstract
The possibility of the simulation of transient radiation effects using laser radiation in microwave heterostructure elements based on AIIIBV semiconductor compounds is studied. The results of the laser simulation of transient radiation effects in pseudomorphous high-electron mobility transistors (pHEMTs) based on AlGaAs/InGaAs/GaAs heterostructures are reported. It is shown that, for the adequate simulation of transient effects in devices on GaAs substrates, one should use laser radiation with a wavelength of λ = 880–900 nm taking into account the dominant mechanisms of ionization in the transistor regions.
Keywords
About the authors
D. V. Gromov
National Research Nuclear University “MEPhI”
Author for correspondence.
Email: DVGromov@mephi.ru
Russian Federation, Moscow, 115409
P. P. Maltsev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: DVGromov@mephi.ru
Russian Federation, Moscow, 117105
S. A. Polevich
ENPO Specialized Electron Systems
Email: DVGromov@mephi.ru
Russian Federation, Moscow, 115409