Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals
- Authors: Sobolev V.V.1, Perevoshchikov D.A.1
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Affiliations:
- Udmurt State University
- Issue: Vol 50, No 5 (2016)
- Pages: 572-578
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197052
- DOI: https://doi.org/10.1134/S1063782616050213
- ID: 197052
Cite item
Abstract
The localization of the transitions in the bulk of the Brillouin zone that form the main structures in the spectra of the imaginary part of the permittivity in the range up to ~7 eV for III–V semiconductors (AlSb, GaSb, InSb, and InAs) is determined using electron density functional theory. It is established that intense transitions occur not only in the vicinity of the high-symmetry axes of the Brillouin zone, but also in some specific large volumes of the irreducible part of the Brillouin zone.
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About the authors
V. V. Sobolev
Udmurt State University
Author for correspondence.
Email: sobolev@uni.udm.ru
Russian Federation, Izhevsk, 426034
D. A. Perevoshchikov
Udmurt State University
Email: sobolev@uni.udm.ru
Russian Federation, Izhevsk, 426034