Email this article Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
- Authors: Timoshnev S.N.1, Mizerov A.M.1, Sobolev M.S.1, Nikitina E.V.1
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Affiliations:
- Saint Petersburg National Research Academic University of the Russian Academy of Sciences
- Issue: Vol 52, No 5 (2018)
- Pages: 660-663
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203319
- DOI: https://doi.org/10.1134/S1063782618050342
- ID: 203319
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Abstract
The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
About the authors
S. N. Timoshnev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Author for correspondence.
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
A. M. Mizerov
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
M. S. Sobolev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
